Method and system for using ion implantation for treating a low-k dielectric film

ABSTRACT

A system and method for forming a mechanically strengthened low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. An upper surface of the low-k dielectric film is then treated in order to increase the film&#39;s mechanical strength, or reduce its dielectric constant.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is related to and claims priority to U.S.provisional application Ser. No. 60/474,673 filed on Jun. 2, 2003 andentitled “Method and system for using ion implantation for increasingthe mechanical stability of a low-k dielectric film,” and U.S.provisional application Ser. No. 60/489,099 filed on Jul. 23, 2003 andentitled “Method and system for using ion implantation for treating alow-k dielectric film.” The entire content of these applications ishereby incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method and system for treating alow-k dielectric film, and, more particularly, to a method and systemfor using ion implantation to treat a low-k dielectric film.

2. Description of Related Art

As is known to those in the semiconductor art, interconnect delay is amajor limiting factor in the drive to improve the speed and performanceof integrated circuits (IC). One way to minimize interconnect delay isto reduce interconnect capacitance by using low dielectric constant(low-k) materials during production of the IC. Thus, in recent years,low-k materials have been developed to replace relatively highdielectric constant insulating materials, such as silicon dioxide,utilized for inter-level and intra-level dielectric layers between metallayers of semiconductor devices. Such low-k materials can be depositedby a spin-on dielectric (SOD) method similar to the application ofphoto-resist, or by chemical vapor deposition (CVD). Thus, the use oflow-k materials is readily adaptable to existing semiconductormanufacturing processes.

However, one drawback to using low-k films in semiconductormanufacturing is that such films have demonstrated a low mechanicalstrength. This makes the films susceptible to damage in downstreamprocess steps, such as during chemical-mechanical polishing (CMP),resulting in low product yields and/or decreased device reliability.This low mechanical strength of low-k films has prevented them fromreceiving widespread acceptance by device manufacturers. Thus, theperformance advantages to using low-k films have been largelyunrealized.

SUMMARY OF THE INVENTION

One aspect of the present invention is to reduce or eliminate any or allof the above-described problems.

Another object of the present invention is to increase the mechanicalstability of a low-k dielectric film.

Yet another object of the present invention is to increase themechanical stability of a low-k dielectric film while achieving adielectric constant substantially equivalent to or less than theoriginal dielectric constant of the film.

Another object of the present invention is to reduce a dielectricconstant of a low-k dielectric film.

These and other objects of the present invention are provided by a low-kdielectric film, as well as a system and method for forming the low-kdielectric film. The inventive method of producing a low-k dielectricfilm on a substrate includes forming the low-k dielectric film on thesubstrate, and performing an ion implantation process on a surface ofthe low-k dielectric film in order to create a hardened surface layer onthe low-k dielectric film. The low-k dielectric film has a nominaldielectric constant less than a dielectric constant of SiO₂.Additionally, the ion implantation process maintains substantially thesame dielectric constant or less than the nominal dielectric constant ofthe low-k dielectric film.

The inventive hardened low-k dielectric film includes a low-k dielectricfilm having a nominal dielectric constant less than the dielectricconstant of SiO₂, and a hardened surface layer on the low-k dielectricfilm. The hardened surface layer is formed by subjecting a surface ofthe low-k dielectric film to an ion implantation process. Additionally,the low-k dielectric layer with the hardened surface layer maintainssubstantially the same dielectric constant or less than the nominaldielectric constant of the low-k dielectric film without the hardenedsurface layer.

The inventive processing system for producing a hardened low-kdielectric film includes a film forming system configured to form thelow-k dielectric film on a substrate, and an ion implant system coupledto the film forming system and configured to treat the low-k dielectricfilm in order to form a hardened surface layer in the low-k dielectricfilm. A controller is coupled to the film forming system and the ionimplant system and configured to control a process for forming the low-kdielectric film and treating the low-k dielectric film using ionimplantation.

Additionally, the inventive method of producing the low-k dielectricfilm on a substrate comprises: forming the low-k dielectric film on thesubstrate, the low-k dielectric film having a nominal dielectricconstant less than a dielectric constant of SiO₂; and performing an ionimplantation process on the low-k dielectric film in order to produce atreated low-k dielectric film having a dielectric constant less than thenominal dielectric constant.

The inventive treated low-k dielectric film includes a low-k dielectricfilm comprising inert ions, wherein the inert ions are implanted bysubjecting the low-k dielectric film to an ion implantation process.

The inventive processing system for producing a treated low-k dielectricfilm includes a film forming system configured to form the low-kdielectric film on a substrate, and an ion implant system coupled to thefilm forming system and configured to treat the low-k dielectric film inorder to reduce a dielectric constant of the low-k dielectric film. Acontroller is coupled to the film forming system and the ion implantsystem and configured to control a process for forming the low-kdielectric film and treating the low-k dielectric film using ionimplantation.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will be readily obtained as the same becomes betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings, wherein:

FIGS. 1A through 1D present a simplified schematic representation of amethod of forming and treating a low-k dielectric film in accordancewith an embodiment of the present invention;

FIG. 2 presents a method of producing a low-k dielectric film accordingto an embodiment of the present invention;

FIG. 3 presents an exemplary method of forming a low-k dielectric filmon a substrate in accordance with an embodiment of the presentinvention;

FIG. 4 presents a processing system for producing a low-k dielectricfilm according to another embodiment of the present invention;

FIGS. 5A and 5B show scanning electron microscope (SEM) views of a JSRlow-k dielectric film ion implanted with a dose of 5¹⁵ at 20 KEV Argonions, according to an embodiment of the present invention;

FIG. 6 shows an SEM view of a JSR low-k dielectric film withoutimplantation, for comparison with FIGS. 5A and 5B;

FIGS. 7A and 7B show SEM views of a Silk D low-k dielectric film ionimplanted with a dose of 5¹⁵ at 20 KEV Argon ions, according to anembodiment of the present invention;

FIGS. 8A and 8B show an SEM view of a Silk D dielectric film withoutimplantation, for comparison with FIGS. 7A and 7B;

FIG. 9 presents hardness data for a Silk dielectric film and a JSRdielectric film with and without treatment; and

FIG. 10 presents a computer system upon which an embodiment of thepresent invention can be implemented.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Referring now to the drawings, wherein like reference numerals designateidentical or corresponding parts throughout the several views, FIGS. 1Athrough 1D present a schematic representation of a method of forming alow-k dielectric film and treating the film to improve the mechanicalstrength of the film, according to an embodiment of the presentinvention. As shown in FIGS. 1A and 1B, a low-k dielectric film 20 isformed on an upper surface of a substrate 10 that may or may not includeadditional layers. The substrate 10 may be a semiconductor, a metallicconductor, or any other substrate to which the low-k film is to beformed upon. The low-k dielectric film has a nominal dielectric constantvalue less than the dielectric constant of SiO₂, which is approximately4 (e.g., the dielectric constant for thermal silicon dioxide can rangefrom 3.8 to 3.9). More specifically, the low-k dielectric film 20 mayhave a dielectric constant of less than 3.0, or a dielectric constantranging from 1.6 to 2.7.

The low-k dielectric film 20 may include at least one of an organic,inorganic, and inorganic-organic hybrid material. Additionally, thelow-k dielectric film 20 may be porous or non-porous. For example, thelow-k dielectric film may include an inorganic, silicate-based material,such as oxidized organosilane (or organo siloxane), deposited using CVDtechniques. Examples of such films include Black Diamond™ CVDorganosilicate glass (OSG) films commercially available from AppliedMaterials, Inc., or Coral™ CVD films commercially available fromNovellus Systems. Alternatively, the low-k dielectric film 20 mayinclude an inorganic, silicate-based material, such as hydrogensilsesquioxane (HSQ) or methyl silsesquioxane (MSQ), deposited using SODtechniques. Examples of such films include FOx HSQ commerciallyavailable from Dow Corning, XLK porous HSQ commercially available fromDow Corning, and JSR LKD-5109 commercially available from JSRMicroelectronics. Still alternatively, the low-k dielectric film 20 cancomprise an organic material deposited using SOD techniques. Examples ofsuch films include SiLK-I, SiLK-J, SiLK-H, SiLK-D, and porous SiLKsemiconductor dielectric resins commercially available from DowChemical, and FLARE™, and Nano-glass commercially available fromHoneywell.

Once the low-k dielectric film 20 is prepared, the film 20 is treated byexposure to an ion implantation process 25, wherein the upper surface ofthe low-k dielectric film is subjected to ion bombardment as shown inFIG. 1C. Ions used for the implantation process are preferably selectedsuch that the implantation process does not cause a substantial increasein the nominal dielectric constant value of the low-k dielectric film20. For example, inert ions, such as an ionized Noble gas (e.g. argon),may be used in the implantation process to minimize chemical bonding ofthe ion to the film 20. However, any ion that does not cause asubstantial increase in the dielectric constant of the low-k dielectricfilm 20 may be used. As used herein, the term “substantial increase”means an increase that results in the dielectric constant of the filmbeing permanently higher than a dielectric constant of 4.0 or preferably3.5. As shown in FIG. 1D, subjecting the low-k dielectric film 20 to ionimplantation forms a “crust”, or hardened layer 30, on the upper surfaceof the film 20 due to the ions locally imparting energy to the low-kdielectric film. Inert ions may or may not reside as part of thehardened layer. The present inventors have discovered that forming thishardened surface 30 increases the overall mechanical strength of thelow-k dielectric film 20. Thus, the hardened surface 30 reduces thelikelihood that the low-k film 20 will be damaged during furtherprocessing of the substrate and film. Moreover, because the implantationprocess does not substantially change the dielectric constant of thelow-k film 20, the mechanically strengthened film will still provideenhanced performance characteristics for ICs and other devices in whichthe film is used.

In addition to the hardened surface layer 30, the present inventors havealso discovered that the ion implantation process of FIG. 1C may resultin the low-k film 20 of FIG. 1D having a reduced dielectric constant.The ion implantation process for forming a reduced dielectric constantlow-k film may or may not cause the formation of a hardened surfacelayer useful for improving mechanical strength, as will be describedbelow. Ions used for the implantation process are preferably inert ionssuch as the ionized Nobel gas (e.g. Argon) noted above with respect tothe increased mechanical strength feature. However, it is sufficientthat the ions are selected such that the implantation process causes areduction in the nominal dielectric constant value of the low-kdielectric film 20.

FIG. 2 is a flow chart 100 illustrating a method of producing a low-kdielectric film in order to increase the mechanical strength of thefilm, in accordance with an embodiment of the present invention. As seenin FIG. 2, flow chart 100 begins with forming the low-k dielectric filmon a substrate as shown by step 110. As noted above, the low-kdielectric film has a nominal dielectric constant, and may includeorganic, inorganic, and inorganic-organic hybrid materials. The low-kdielectric film can be formed using CVD techniques, or SOD techniquessuch as those offered in the Clean Track ACT 8 SOD and ACT 12 SODcoating systems commercially available from Tokyo Electron Limited(TEL). The Clean Track ACT 8 (200 mm) and ACT 12 (300 mm) coatingsystems provide coat, bake, and cure tools for SOD materials. Othersystems and methods for forming a low-k dielectric film on a substrateare well known to those skilled in the art of both spin-on dielectrictechnology and CVD dielectric technology.

After forming the low-k dielectric film 20 on substrate 10, the low-kdielectric film is subjected to ion implantation in order to perform atleast one of forming the hardened surface layer 30, or treatingsubstantially the entire low-k dielectric film 20 to decrease theoverall value of the dielectric constant, as shown by step 120. Forexample, the ion implantation may be performed in a commerciallyavailable ion implant tool, such as an Axcelis GSD 200, GSD 200 HE, GSD200 EE, HC3, GSD III/LED, MC3, and HE3, offered by Axcelis Technologies,Inc.; a Varian ES00, Varian VIISta 80, VIISta 810 HP, VIISta 3000, and aVarian VIISion, offered by Varian Semiconductor Equipment Associates; oran AMAT xR120, offered by Applied Materials, Inc. As noted above, theion used in the implantation process is preferably an inert ion, whicheither minimizes or reduces changes in the dielectric properties of thelow-k dielectric film when forming a hardened surface layer, or reducesthe dielectric constant of the low-k dielectric film when treating thefilm.

In order to achieve surface layer hardening, the ion implantationprocess is preferably performed at relatively low energy and high fluxto minimize the change in dielectric constant of the film 20, or reducethe dielectric constant of the film 20. The ion beam energy may, forexample, range from 0.2 to 200 keV or 5 to 50 keV, and preferably rangesfrom 10 to 20 keV. Additionally, the ion beam dose may range from 5×10¹²to 1×10¹⁶ atoms/cm² or 0.5×10¹⁵ to 1×10¹⁶ atoms/cm², and preferablyranges from 1×10¹⁵ to 1×10¹⁶ atoms/cm². However, any energy and dosethat does not cause a permanent and substantial increase in thedielectric constant of the low-k dielectric film 20 may be used inaccordance with the present invention. Implantation process parametersother than ion type, energy and dose may also vary as long as suchvariance does not cause a permanent and substantial increase in thedielectric constant of the low-k dielectric film 20.

In order to achieve a reduced dielectric constant of the low-k film 20without a hardened surface layer, the ion implantation process ispreferably performed with inert ions at a relatively high energy and lowflux to implant the inert ions deep into the low-k film 20. The ion beamenergy may, for example, range from 0.2 to 200 keV, and is preferablygreater than 50 keV, and more preferably greater than 100 50 keV.Additionally, the ion beam dose may range from 5×10¹² to 1×10¹⁶atoms/cm², and more preferably ranges from 5×10¹² to 1×10¹⁵ atoms/cm².However, any energy and dose that causes a decrease in the dielectricconstant of the low-k dielectric film 20 may be used in accordance withthe present invention. Implantation process parameters other than iontype, energy and dose may also vary as long as such variance does notdestroy the effect of decreasing the dielectric constant of the low-kfilm 20.

Thus, the present inventors have recognized that providing ionimplantation within the beam energy range of 0.2 to 200 keV and the ionbeam dose range of 5×10¹² to 1×10¹⁶ atoms/cm² forms a hardened surfacelayer of the low-k film and can actually reduce the dielectric constantof the low-k dielectric film. That is, hardening of the surface layerand reducing the dielectric constant are not mutually exclusive to theion implantation process of the present invention. As indicated by thepreferred beam and energy ranges noted above, the present inventors haverealized that within the beam energy range of 0.2 to 200 keV and the ionbeam dose range of 5×10¹² to 1×10¹⁶ atoms/cm², as the beam energy isdecreased and the beam dose is increased, the formation of a hardenedsurface layer is enhanced and the reduction of the low-k dielectricconstant is not enhanced. Conversely, within this same range, as thebeam energy is increased, and the beam dose is decreased, the reductionof the low-k dielectric constant is enhanced and the formation of thehardened surface layer is not enhanced.

Based on this recognition, the process parameters of a single ionimplantation process step can be chosen to provide a desired level ofsurface hardening and reduced dielectric constant of the low-k film.However, processes performed at extreme endpoints of the ranges mayresult in a hardening or reduced dielectric feature that is notpractically useful. In this and other situations, a single ionimplantation step is undesirable, and the low-k dielectric film may betreated with an ion implantation process having two or more steps eachhaving parameters ideal for enhancing a desired characteristic. Theprecise parameters of the ion implantation process will depend on thedesired characteristics of the low-k film and are readily determinableby one of ordinary skill in the art having the benefit of the inventor'srealization of how the process parameters affect the surface hardeningand dielectric constant features, and the preferred parameter ranges foreach feature described above.

FIG. 3 shows an example of an SOD process 300 that may be used toperform the forming step 110 of FIG. 2. As seen in FIG. 3, the processbegins in step 310 with the application of an adhesion promoter to thesubstrate 10, if necessary. For instance, when forming a SiLK-basedlow-k dielectric film, an adhesion promoter is recommended. In step 320,the substrate is baked at 150 to 300 C, if an adhesion promoter isapplied. As shown by step 330, once the adhesion promoter is applied andbaked, the substrate 10 is spin coated with the low-k dielectric film20. In step 340, the low-k dielectric film 20 is baked at a temperatureof 150 to 300 C, and, in step 350, the low-k dielectric film is cured at400 to 450 C in a furnace or a hot-plate bake tool. In one embodiment,the ion implantation process is performed following the cure step 350.In an alternate embodiment, the ion implantation process is performedprior to the cure step 350.

FIG. 4 is a block diagram of a processing system for producing a low-kdielectric film in order to treat the film. As seen in this figure, theprocessing system 1 includes a film forming system 210 and an ionimplant system 220 coupled to the film forming system 210. A controller230 is coupled to the film forming system 210 and the ion implant system220 to exchange data and information with these systems, as well ascontrol the operation of each system according to a process recipe. Thefilm forming system 210 and the ion implant system 220 may be directlycoupled to one another, or each system can constitute a process moduleappended from a cluster tool substrate transfer configuration or aserial tool substrate transfer configuration.

As described above, the film forming system 210 may be a spin-ondielectric system, or a chemical vapor deposition system. The CVD systemmay or may not employ a plasma during processing. For example, the SODsystem can comprise a Clean Track ACT 8 SOD, or an ACT 12 SOD coatingsystem commercially available from Tokyo Electron Limited (TEL).Furthermore, the ion implantation system 220 may include conventionalfeatures, such as an ion source, a magnetic filter, an ion beamneutralizer, and a vacuum system, each of which is understood to thoseskilled in the art of ion implant system design. For example, the ionimplant system 220 may be capable of an ion beam energy ranging from 0.2to 200 keV, and an ion beam dose ranging from 5×10¹² to 1×10¹⁶atoms/cm².

Controller 230 includes a microprocessor, memory, and a digital I/O port(potentially including D/A and/or A/D converters) capable of generatingcontrol voltages sufficient to communicate and activate inputs to thefilm forming system 210 and the ion implant system 220 as well asmonitor outputs from these systems. A program stored in the memory isutilized to interact with the systems 210 and 220 according to a storedprocess recipe. One example of controller 230 is a DELL PRECISIONWORKSTATION 530™, available from Dell Corporation, Austin, Tex. Thecontroller 230 may also be implemented as a general purpose computersuch as the computer described with respect to FIG. 9.

Controller 230 may be locally located relative to the film formingsystem 210 and the ion implant system 220, or it may be remotely locatedrelative to the film forming system 210 and the ion implant system 220via an internet or intranet. Thus, controller 230 can exchange data withthe film forming system 210 and the ion implant system 220 using atleast one of a direct connection, an intranet, and the internet.Controller 230 may be coupled to an intranet at a customer site (i.e., adevice maker, etc.), or coupled to an intranet at a vendor site (i.e.,an equipment manufacturer). Furthermore, another computer (i.e.,controller, server, etc.) can access controller 230 to exchange data viaat least one of a direct connection, an intranet, and the internet.

FIGS. 5A and 5B show scanning electron microscope (SEM) views of a JSRlow-k dielectric film ion implanted with a dose of 5¹⁵ at 20 KEV Argonions. As seen in these figures, a hardened layer of low-k dielectricfilm was obtained at a thickness of about 79 nm and 54 nm in FIGS. 5Aand 5B, respectively. FIG. 6 shows an SEM view of a JSR low-k dielectricfilm without implantation, for comparison. Similarly FIGS. 7A and 7Bshow SEM views of a Silk D low-k dielectric film ion implanted with adose of 5¹⁵ at 20 KEV Argon ions. As seen in these figures, a hardenedlayer of low-k dielectric film was obtained at a thickness of about 82nm and 80 nm in FIGS. 7A and 7B, respectively. FIGS. 8A and 8B show anSEM view of a Silk D dielectric film without implantation, forcomparison. Thus, the ion implantation process of the present inventionis shown to provide a discrete hardened surface layer on commerciallyavailable low-k dielectric films.

FIG. 9 presents exemplary hardness data for both SiLK and JSR low-kdielectric films. For example, the hardness of the treated SiLK (solidsquares) increases by approximately a factor of six to eight in theupper 50 nm of the film (0.2 to 1.6 GPa at 10 nm from the surface, and0.1 to 0.6 GPa at 50 nm) relative to the untreated SiLK film (soliddiamonds). Additionally, for example, the hardness of the treated JSR(x's) increases by approximately a factor of three to six in the upper50 nm of the film (0.4 to 2.3 GPa at 10 nm from the surface, and 0.3 to0.9 GPa at 50 nm) relative to the untreated SiLK film (solid triangles).

FIG. 10 illustrates a computer system 1201 upon which an embodiment ofthe present invention may be implemented. The computer system 1201 maybe used as the controller 230 to perform any or all of the functions ofthe controller described above. The computer system 1201 includes a bus1202 or other communication mechanism for communicating information, anda processor 1203 coupled with the bus 1202 for processing theinformation. The computer system 1201 also includes a main memory 1204,such as a random access memory (RAM) or other dynamic storage device(e.g., dynamic RAM (DRAM), static RAM (SRAM), and synchronous DRAM(SDRAM)), coupled to the bus 1202 for storing information andinstructions to be executed by processor 1203. In addition, the mainmemory 1204 may be used for storing temporary variables or otherintermediate information during the execution of instructions by theprocessor 1203. The computer system 1201 further includes a read onlymemory (ROM) 1205 or other static storage device (e.g., programmable ROM(PROM), erasable PROM (EPROM), and electrically erasable PROM (EEPROM))coupled to the bus 1202 for storing static information and instructionsfor the processor 1203.

The computer system 1201 also includes a disk controller 1206 coupled tothe bus 1202 to control one or more storage devices for storinginformation and instructions, such as a magnetic hard disk 1207, and aremovable media drive 1208 (e.g., floppy disk drive, read-only compactdisc drive, read/write compact disc drive, compact disc jukebox, tapedrive, and removable magneto-optical drive). The storage devices may beadded to the computer system 1201 using an appropriate device interface(e.g., small computer system interface (SCSI), integrated deviceelectronics (IDE), enhanced-IDE (E-IDE), direct memory access (DMA), orultra-DMA).

The computer system 1201 may also include special purpose logic devices(e.g., application specific integrated circuits (ASICs)) or configurablelogic devices (e.g., simple programmable logic devices (SPLDs), complexprogrammable logic devices (CPLDs), and field programmable gate arrays(FPGAs)).

The computer system 1201 may also include a display controller 1209coupled to the bus 1202 to control a display 1210, such as a cathode raytube (CRT), for displaying information to a computer user. The computersystem includes input devices, such as a keyboard 1211 and a pointingdevice 1212, for interacting with a computer user and providinginformation to the processor 1203. The pointing device 1212, forexample, may be a mouse, a trackball, or a pointing stick forcommunicating direction information and command selections to theprocessor 1203 and for controlling cursor movement on the display 1210.In addition, a printer may provide printed listings of data storedand/or generated by the computer system 1201.

The computer system 1201 performs a portion or all of the processingsteps of the invention in response to the processor 1203 executing oneor more sequences of one or more instructions contained in a memory,such as the main memory 1204. Such instructions may be read into themain memory 1204 from another computer readable medium, such as a harddisk 1207 or a removable media drive 1208. One or more processors in amulti-processing arrangement may also be employed to execute thesequences of instructions contained in main memory 1204. In alternativeembodiments, hard-wired circuitry may be used in place of or incombination with software instructions. Thus, embodiments are notlimited to any specific combination of hardware circuitry and software.

As stated above, the computer system 1201 includes at least one computerreadable medium or memory for holding instructions programmed accordingto the teachings of the invention and for containing data structures,tables, records, or other data described herein. Examples of computerreadable media are compact discs, hard disks, floppy disks, tape,magneto-optical disks, PROMs (EPROM, EEPROM, flash EPROM), DRAM, SRAM,SDRAM, or any other magnetic medium, compact discs (e.g., CD-ROM), orany other optical medium, punch cards, paper tape, or other physicalmedium with patterns of holes, a carrier wave (described below), or anyother medium from which a computer can read.

Stored on any one or on a combination of computer readable media, thepresent invention includes software for controlling the computer system1201, for driving a device or devices for implementing the invention,and for enabling the computer system 1201 to interact with a human user(e.g., print production personnel). Such software may include, but isnot limited to, device drivers, operating systems, development tools,and applications software. Such computer readable media further includesthe computer program product of the present invention for performing allor a portion (if processing is distributed) of the processing performedin implementing the invention.

The computer code devices of the present invention may be anyinterpretable or executable code mechanism, including but not limited toscripts, interpretable programs, dynamic link libraries (DLLs), Javaclasses, and complete executable programs. Moreover, parts of theprocessing of the present invention may be distributed for betterperformance, reliability, and/or cost.

The term “computer readable medium” as used herein refers to any mediumthat participates in providing instructions to the processor 1203 forexecution. A computer readable medium may take many forms, including butnot limited to, non-volatile media, volatile media, and transmissionmedia. Non-volatile media includes, for example, optical, magneticdisks, and magneto-optical disks, such as the hard disk 1207 or theremovable media drive 1208. Volatile media includes dynamic memory, suchas the main memory 1204. Transmission media includes coaxial cables,copper wire and fiber optics, including the wires that make up the bus1202. Transmission media also may also take the form of acoustic orlight waves, such as those generated during radio wave and infrared datacommunications.

Various forms of computer readable media may be involved in carrying outone or more sequences of one or more instructions to processor 1203 forexecution. For example, the instructions may initially be carried on amagnetic disk of a remote computer. The remote computer can load theinstructions for implementing all or a portion of the present inventionremotely into a dynamic memory and send the instructions over atelephone line using a modem. A modem local to the computer system 1201may receive the data on the telephone line and use an infraredtransmitter to convert the data to an infrared signal. An infrareddetector coupled to the bus 1202 can receive the data carried in theinfrared signal and place the data on the bus 1202. The bus 1202 carriesthe data to the main memory 1204, from which the processor 1203retrieves and executes the instructions. The instructions received bythe main memory 1204 may optionally be stored on storage device 1207 or1208 either before or after execution by processor 1203.

The computer system 1201 also includes a communication interface 1213coupled to the bus 1202. The communication interface 1213 provides atwo-way data communication coupling to a network link 1214 that isconnected to, for example, a local area network (LAN) 1215, or toanother communications network 1216 such as the Internet. For example,the communication interface 1213 may be a network interface card toattach to any packet switched LAN. As another example, the communicationinterface 1213 may be an asymmetrical digital subscriber line (ADSL)card, an integrated services digital network (ISDN) card or a modem toprovide a data communication connection to a corresponding type ofcommunications line. Wireless links may also be implemented. In any suchimplementation, the communication interface 1213 sends and receiveselectrical, electromagnetic or optical signals that carry digital datastreams representing various types of information.

The network link 1214 typically provides data communication through oneor more networks to other data devices. For example, the network link1214 may provide a connection to another computer through a localnetwork 1215 (e.g., a LAN) or through equipment operated by a serviceprovider, which provides communication services through a communicationsnetwork 1216. The local network 1214 and the communications network 1216use, for example, electrical, electromagnetic, or optical signals thatcarry digital data streams, and the associated physical layer (e.g., CAT5 cable, coaxial cable, optical fiber, etc). The signals through thevarious networks and the signals on the network link 1214 and throughthe communication interface 1213, which carry the digital data to andfrom the computer system 1201 maybe implemented in baseband signals, orcarrier wave based signals. The baseband signals convey the digital dataas unmodulated electrical pulses that are descriptive of a stream ofdigital data bits, where the term “bits” is to be construed broadly tomean symbol, where each symbol conveys at least one or more informationbits. The digital data may also be used to modulate a carrier wave, suchas with amplitude, phase and/or frequency shift keyed signals that arepropagated over a conductive media, or transmitted as electromagneticwaves through a propagation medium. Thus, the digital data may be sentas unmodulated baseband data through a “wired” communication channeland/or sent within a predetermined frequency band, different thanbaseband, by modulating a carrier wave. The computer system 1201 cantransmit and receive data, including program code, through thenetwork(s) 1215 and 1216, the network link 1214, and the communicationinterface 1213. Moreover, the network link 1214 may provide a connectionthrough a LAN 1215 to a mobile device 1217 such as a personal digitalassistant (PDA) laptop computer, or cellular telephone.

Although only certain exemplary embodiments of this invention have beendescribed in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of this invention. Accordingly, all such modifications areintended to be included within the scope of this invention.

1. A method of producing a low-k dielectric film on a substratecomprising: forming said low-k dielectric film on said substrate, saidlow-k dielectric film having a nominal dielectric constant less than avalue of 3.5; and performing an ion implantation process on a surface ofsaid low-k dielectric film in order to create a hardened surface layeron the low-k dielectric film, wherein said performing comprisesperforming said ion implantation process at process parameters that willnot cause a substantial increase in the nominal dielectric constant ofthe low-k dielectric film.
 2. The method of claim 1, wherein saidforming said low-k dielectric film comprises performing at least one ofa spin-on-dielectric technique and a chemical vapor depositiontechnique.
 3. The method of claim 1, wherein said forming said low-kdielectric film comprises forming at least one of a porous film and anon-porous film.
 4. The method of claim 1, wherein said forming saidlow-k dielectric film comprises forming a film having a dielectricconstant less than a value of 3.0.
 5. The method of claim 4, whereinsaid forming said low-k dielectric film comprises forming a film havinga dielectric constant ranging from 1.6 to 2.7.
 6. The method of claim 1,wherein said forming said low-k dielectric film comprises forming a filmincluding at least one of an organic material or an inorganic material.7. The method of claim 6, wherein said forming a film including aninorganic material comprises forming a film including aninorganic-organic hybrid material.
 8. The method of claim 6, whereinsaid forming a film including an inorganic material comprises forming afilm including an oxidized organo silane.
 9. The method of claim 6,wherein said forming a film including an inorganic material comprisesforming a film including at least one of hydrogen silsesquioxane, andmethyl silsesquioxane.
 10. The method of claim 6, wherein said forming afilm including an inorganic material comprises forming a film includinga silicate-based material.
 11. The method of claim 6, wherein saidforming a film including an inorganic material comprises forming acollective film including silicon, carbon, and oxygen.
 12. The method ofclaim 11, wherein said forming a collective film further comprisesincluding hydrogen in said collective film.
 13. The method of claim 1,wherein said performing comprises performing said ion implantationprocess at an ion energy ranging from 5 to 50 keV.
 14. The method ofclaim 1, wherein said performing comprises performing said ionimplantation process at an ion dose ranging from 0.5×10¹⁵ to 1×10¹⁶. 15.The method of claim 1, wherein said performing comprises performing saidion implantation process with an argon ion implant.
 16. The method ofclaim 1, wherein said performing said ion implantation process includesforming said hardened surface layer with a hardness ranging fromapproximately 1 to 3 GPa.
 17. A hardened low-k dielectric filmcomprising: a low-k dielectric film having a nominal dielectric constantless that a value of 3.5; and a hardened surface layer on said low-kdielectric film, wherein said hardened surface layer is formed bysubjecting a surface of said low-k dielectric film to an ionimplantation process, wherein said low-k dielectric film comprises anion that will not cause a substantial increase in the nominal dielectricconstant of the low-k dielectric film.
 18. The hardened low-k dielectricfilm of claim 17, wherein said low-k dielectric film comprises at leastone of spin-on-dielectric film and a chemical vapor deposition film. 19.The hardened low-k dielectric film of claim 17, wherein said low-kdielectric film comprises at least one of a porous film and a non-porousfilm.
 20. The hardened low-k dielectric film of claim 17, wherein saidlow-k dielectric film has a dielectric constant less than a value of3.0.
 21. The hardened low-k dielectric film of claim 20, wherein saidlow-k dielectric film has a dielectric constant ranging from 1.6 to 2.7.22. The hardened low-k dielectric film of claim 17, wherein said low-kdielectric film comprises at least one of an organic material, and aninorganic material.
 23. The hardened low-k dielectric film of claim 22,wherein said low-k dielectric film comprises an inorganic-organic hybridmaterial.
 24. The hardened low-k dielectric film of claim 22, whereinsaid inorganic material comprises an oxidized organo silane.
 25. Thehardened low-k dielectric film of claim 22, wherein said inorganicmaterial comprises at least one of hydrogen silsesquioxane, and methylsilsesquioxane.
 26. The hardened low-k dielectric film of claim 22,wherein said inorganic material comprises a silicate-based material. 27.The hardened low-k dielectric film of claim 22, wherein said inorganicmaterial collectively comprises silicon, carbon, and oxygen.
 28. Thehardened low-k dielectric film of claim 27, wherein said inorganicmaterial further comprises hydrogen.
 29. The hardened low-k dielectricfilm of claim 17, wherein said film includes physical properties of afilm formed by said ion implantation process at an ion energy rangingfrom 5 to 50 keV.
 30. The hardened low-k dielectric film of claim 17,wherein said film includes physical properties of a film formed by saidion implantation process at an ion dose ranging from 0.5×10¹⁵ to 1×10¹⁶.31. The hardened low-k dielectric film of claim 17, wherein said filmcomprises an argon ion implant.
 32. The hardened low-k dielectric filmof claim 17, wherein said hardened surface layer includes a hardness inthe range of approximately 1 to approximately 3 GPa.
 33. A processingsystem for producing a hardened low-k dielectric film comprising: a filmforming system configured to form said low-k dielectric film on asubstrate; an ion implant system coupled to said film forming system andconfigured to treat said low-k dielectric film in order to form ahardened surface layer in said low-k dielectric film; and a controllercoupled to said film forming system and said ion implant system andconfigured to control a process for forming said low-k dielectric filmand treating said low-k dielectric film using ion implantation.
 34. Theprocessing system of claim 33, wherein said film forming systemcomprises at least one of a spin-on-dielectric system, and a chemicalvapor deposition system.
 35. The processing system of claim 33, whereinsaid film forming system is configured to form a low-k dielectric filmcomprising at least one of a porous film, and a non-porous film.
 36. Theprocessing system of claim 33, wherein said film forming system isconfigured to form a low-k dielectric film having a dielectric constantless than a value of 3.0.
 37. The processing system of claim 36, whereinsaid film forming system is configured to form a low-k dielectric filmhaving a dielectric constant ranging from 1.6 to 2.7.
 38. The processingsystem of claim 33, wherein said film forming system is configured toform a low-k dielectric film comprising at least one of an organicmaterial, and an inorganic material.
 39. The processing system of claim38, wherein said film forming system is configured to form a low-kdielectric film comprising an inorganic-organic hybrid material.
 40. Theprocessing system of claim 38, wherein said film forming system isconfigured to form a low-k dielectric film comprising an inorganicmaterial including an oxidized organo silane.
 41. The processing systemof claim 38, wherein said film forming system is configured to form alow-k dielectric film comprising an inorganic material including atleast one of hydrogen silsesquioxane, and methyl silsesquioxane.
 42. Theprocessing system of claim 38, wherein said film forming system isconfigured to form an inorganic material including a silicate-basedmaterial.
 43. The processing system of claim 38, wherein said filmforming system is configured to form an inorganic material collectivelyincluding silicon, carbon, and oxygen.
 44. The processing system ofclaim 43, wherein said film forming system is configured to form saidinorganic material further comprising hydrogen.
 45. The processingsystem of claim 33, wherein said ion implant system is configured toprovide an ion energy ranging from 5 to 50 keV.
 46. The processingsystem as recited in claim 33, wherein said ion implant system isconfigured to provide an ion dose ranging from 0.5×10¹⁵ to 1×10¹⁶. 47.The processing system of claim 33, wherein said ion implant system isconfigured to provide argon ion implant.
 48. The processing system ofclaim 33, wherein said ion implant system is configured to performingsaid ion implantation process at process parameters that will not causea substantial increase in the nominal dielectric constant of the low-kdielectric film.
 49. A method of producing a low-k dielectric film on asubstrate comprising: step for forming said low-k dielectric film onsaid substrate, said low-k dielectric film having a nominal dielectricconstant less than a dielectric constant of 3.5; and step for performingan ion implantation process on a surface of said low-k dielectric filmin order to create a hardened surface layer on the low-k dielectricfilm, wherein said step for performing said ion implantation processwill not cause a substantial increase in the nominal dielectric constantof the low-k dielectric film.
 50. A hardened low-k dielectric filmcomprising: a low-k dielectric film having a nominal dielectric constantless than the dielectric constant of 3.5; and means for providingmechanical strength to said low-k dielectric film without substantiallyincreasing the nominal dielectric constant of said low-k dielectricfilm.
 51. A method of producing a low-k dielectric film on a substratecomprising: forming said low-k dielectric film on said substrate, saidlow-k dielectric film having a nominal dielectric constant less than adielectric constant of SiO2; and performing an ion implantation processon said low-k dielectric film in order to produce a treated low-kdielectric film having a dielectric constant less than said nominaldielectric constant.
 52. The method of claim 51, wherein said performingcomprises performing said ion implantation process using inert ions. 53.The method of claim 52, wherein said performing comprises performingsaid ion implantation process using an ionized Noble gas.
 54. The methodof claim 51, further comprising: forming a hardened surface layer onsaid low-k dielectric film.
 55. The method of claim 54, wherein saidforming said hardened surface layer includes forming a hardened surfacelayer with a hardness ranging from approximately 1 to 3 GPa.
 56. Themethod of claim 51, wherein said forming said low-k dielectric filmcomprises performing at least one of a spin-on-dielectric technique anda chemical vapor deposition technique.
 57. The method of claim 51,wherein said forming said low-k dielectric film comprises forming atleast one of a porous film and a non-porous film.
 58. The method ofclaim 51, wherein said forming said low-k dielectric film comprisesforming a film having a dielectric constant less than a value of 3.0.59. The method of claim 58, wherein said forming said low-k dielectricfilm comprises forming a film having a dielectric constant ranging from1.6 to 2.7.
 60. The method of claim 51, wherein said forming said low-kdielectric film comprises forming a film including an inorganicmaterial.
 61. The method of claim 60, wherein said forming a filmincluding an inorganic material comprises forming a film including aninorganic-organic hybrid material.
 62. The method of claim 60, whereinsaid forming a film including an inorganic material comprises forming afilm including an oxidized organo silane.
 63. The method of claim 60,wherein said forming a film including an inorganic material comprisesforming a film including at least one of hydrogen silsesquioxane, andmethyl silsesquioxane.
 64. The method of claim 60, wherein said forminga film including an inorganic material comprises forming a filmincluding a silicate-based material.
 65. The method of claim 60, whereinsaid forming a film including an inorganic material comprises forming acollective film including silicon, carbon, and oxygen.
 66. The method ofclaim 65, wherein said forming a collective film further comprisesincluding hydrogen in said collective film.
 67. The method of claim 51,wherein said performing comprises performing said ion implantationprocess at an ion energy range of 0.2 to 200 keV and an ion dose of5×10¹² to 1×10¹⁶ atoms/cm².
 68. The method of claim 67, wherein saidperforming comprises performing said ion implantation process at arelatively low ion energy and a relatively high ion dose to enhanceformation of a hardened surface layer on said low-k dielectric film. 69.The method of claim 67, wherein said performing comprises performingsaid ion implantation process at a relatively high ion energy and arelatively low ion dose to enhance reduction of a dielectric constant ofsaid low-k dielectric film.
 70. The method of claim 69 wherein saidperforming comprises performing said ion implantation process at an ionenergy greater than about 50 keV.
 71. The method of claim 70 whereinsaid performing comprises performing said ion implantation process at anion energy greater than about 100 keV.
 72. The method of claim 69,wherein said performing comprises performing said ion implantationprocess at an ion dose ranging from 5×10¹² to 1×10¹⁶.
 73. A treatedlow-k dielectric film produced by a method according to any one ofclaims 51-72.
 74. A processing system for producing a treated low-kdielectric film comprising: a film forming system configured to formsaid low-k dielectric film on a substrate; an ion implant system coupledto said film forming system and configured to treat said low-kdielectric film in order to reduce a dielectric constant of said low-kdielectric film; and a controller coupled to said film forming systemand said ion implant system and configured to control a process forforming said low-k dielectric film and treating said low-k dielectricfilm using ion implantation, wherein said processing system isconfigured to producing a low-k dielectric film on said substrateaccording to any one of claims 51-72.